Tokyo, Japan– Sony Corporation today announced the development of a 35mm full size (diagonal:43.3mm/Type 2.7) 24.81 effective megapixel, ultra-high speed high image quality CMOS image sensor designed to meet the increasing requirement for rapid image capture and advanced picture quality within digital SLR cameras.

Development Background

In recent years, the demand for digital SLR cameras featuring high resolution and wide graduation ranges capable of capturing every detail of the subject matter has continued to increase, particularly among high-end amateur users.  Additionally, the increasing user requirement to shoot from the same focal length and angle as 35mm film cameras using interchangeable lenses has led to significant interest in the development of 35mm, full size CMOS image sensors.

However, there are a number of technical challenges to developing full (large) size image sensors, such as the propagation delay caused by using extended power circuitry and signal lines, and the difficulty of maintaining uniform sensitivity and signal saturation across the surface of the screen.  It is therefore extremely important to accurately control exposure variance and match circuit patterns.

Advantages of This Device

The newly developed CMOS image sensor combines unique circuit design technology with Sony's advanced fabrication expertise, such as advanced planarization for minimizing fluctuation, to realize 35mm, full size, 24.81 effective megapixel resolution.  Sony’s “Column-Parallel A/D Conversion Technique” also provides each column within the sensor with its own A/D converter, minimizing image degradation caused by the noise that arises during analog processing while at the same time delivering an extremely high signal conversion speed.

The enhanced image quality generated by the sensor’s 24.81 effective megapixel resolution, wide range of graduation expression achieved by its full size broad dynamic range, and the low noise, high resolution, ultra-responsive performance provided by Sony’s Column-Parallel A/D Conversion technique enable it to meet the ever-increasing requirements within high performance digital SLR cameras.

Sony will target for mass production of this CMOS image sensor within this year.

Major Features

１）High picture quality in 35mm full size image sensor with 24.81M effective pixels

２）“Column-Parallel A/D Conversion method” achieves high S/N and high-speed imaging

・CDS/PGA(24dB)Circuit　（PGA: Programmable Gain Amplifier）

・12bit-AD Converter on chip

・Diversified readout mode

・All-pixel scan mode　6.3 frame/s (12bit)

・Window readout

３）High-speed digital output（12 channel parallel LVDS output）

Device Structure

Image size                                Diagonal width 43.3mm (Type 2.7)

Total number of pixels               6236(H) x 4124(V) approx. 25.72M pixels

Number of effective pixels         6104(H) x 4064(V) approx.24.81M pixels

Number of active pixels            6096(H) x 4056(V) approx.24.73M pixels

Chip size                                  41.0mm (H) x 31.9 mm (V)

Unit cell size                             5.94μm (H) x 5.94μm (V)